Anisotropic and inhomogeneous Coulomb screening in the Thomas-Fermi approximation: Application to quantum dot-wetting layer system and Auger relaxation

نویسندگان

  • Jacky Even
  • Charles Cornet
  • François Doré
  • F. Doré
چکیده

A model for anisotropic Coulomb screening by 2D and 3D carriers simultaneously, is proposed in the Thomas-Fermi approximation. Analytical expressions for the screened interaction potentials and scattering matrix elements are obtained. This model is applied to the Auger relaxation of carriers in an InAs/InP quantum dot (QD) – wetting layer (WL) system. The influences of the QD morphology and carriers densities on screening and Auger effects are studied. 2D-2D scattering is found to be the most important process, depending especially on QD morphology. A smearing effect is associated to the wetting layer wavefunction extension along the growth axis. The screened potential is similar to a potential screened by 3D carriers. P.A.C.S. 73.21.La, 71.15.Qe, 71.15.-m, 73.22.Dj

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

A model for anisotropic Coulomb screening : application to Auger relaxation by 2D and 3D charge carriers in a quantum dot – wetting layer system

A model for anisotropic Coulomb screening by 2D and 3D carriers simultaneously, is proposed in the Thomas-Fermi approximation. Analytical expressions for the screened interaction potentials and scattering matrix elements are obtained. This model is applied to the Auger relaxation of carriers in an InAs/InP quantum dot (QD) – wetting layer (WL) system. The influences of the QD morphology and car...

متن کامل

Auger processes mediating the nonresonant optical emission from a semiconductor quantum dot embedded inside an optical cavity.

We show that Auger processes involving wetting layer transitions mediate emission from a cavity that is detuned from a quantum dot by even tens of meV. The wetting layer thus acts as a reservoir, which by Coulomb scattering can supply or absorb the energy difference between emitter and cavity. We perform microscopic calculations of the effect treating the wetting layer as a non-Markovian reserv...

متن کامل

Simulation of Direct Pumping of Quantum Dots in a Quantum Dot Laser

In this paper, the nonlinear rate equations governing a quantum dot laser isused to simulate the transient as well as the steady-state behaviors of the laser.Computation results show that the rate equations are capable of simulating true behaviorof a quantum dot laser. Then, the pump rates of the rate equations (which show indirectelectrical pumping of the quantum dots through a wetting layer) ...

متن کامل

Analysis of carriers dynamics and laser emission in 1.55 m InAs/InP(113)B quantum dot lasers

Thanks to optimized growth techniques, a high density of uniformly sized InAs quantum dots (QD) can be grown on InP(113)B substrates. Low threshold currents obtained at 1.54 μm for broad area lasers are promising for the future. This paper is a review of the recent progress toward the understanding of electronic properties, carrier dynamics and device modelling in this system, taking into accou...

متن کامل

Analytical Investigation of Frequency Behavior in Tunnel Injection Quantum Dot VCSEL

The frequency behavior of the tunnel injection quantum dot vertical cavitysurface emitting laser (TIQD-VCSEL) is investigated by using an analyticalnumericalmethod on the modulation transfer function. The function is based on therate equations and is decomposed into components related to different energy levelsinside the quantum dot and injection well. In this way, the effect of the tunnelingpr...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2017